Ever more layers on 3D NAND for ever cheaper chips with ever greater capacity.
Next to Kioxia, Micron or Samsung, SK Hynix is one of the main players in 3D NAND memory. A player who wants to boost a new dynamic with the upcoming release of even a little denser chips.
Horizon 2024-2025?
SK Hynix has just presented its 8th generation of 3D NAND flash memory, the main characteristic of which is without hesitation the number of layers with the aim of putting pressure on the competition.
Currently, the SSD market is generally content with 176-layer chips and Micron, for example, is now marketing 232-layer semiconductors. SK Hynix is therefore going a little further with 300-layer components that seem planned for 2024-2025.
The brand does not specify its timetable further, but it logically confirms that the move to 300 layers will improve the performance and profitability of semiconductors.
Maximum throughput of 194 MB/s
For its technology, which it describes as the 8th generation of 3D NAND chips, SK Hynix evokes the use of triple-level cells (TLC) with a density of more than 20 Gb/mm² compared to 11.55 for its previous generation.
This 7th generation – at 238 layers – had a much lower maximum throughput and SK Hynix claims an increase of 18% to 194 MB/s. The company adds that its new chips have a 2,400 MT/s interface. explaining that they are designed with PCIe 5.0 SSDs in mind.
However, SK Hynix has not given a date for the mass production of this 8th generation, the finalization of which should be very close given the information revealed.
Source : Videocardz
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