(CercleFinance.com) – Soitec announces that it has released its first SmartSiC silicon carbide substrate in 200 mm, a substrate from the pilot line of the group of semiconductor materials within its ‘Substrate Innovation Center’, located at CEA-Leti in Grenoble .
With this release, it is able ‘to expand its SiC product portfolio beyond 150mm, to step up a gear in the development of its SmartSiC substrates and to meet the growing demand from the automotive market’.
Soitec launched the construction of a new plant in France, Bernin 4, in March 2022. This plant is mainly dedicated to the manufacture of SmartSiC substrates in 150 mm and 200 mm and should be operational by the second half of 2023.
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